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The Stability Criterion of a Semiconductor Superlattice in the Drift–Diffusion Approximation

В. Ч. Жуковский$^1$, Н. С. Прудских$^2$, С. Е. Головатюк$^2$, В. Д. Кревчик$^3$, М. Б. Семенов$^3$, A. V. Shorokhov$^2$

Moscow University Physics Bulletin 2018. 73. N 4. P. 398

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Annotation

A criterion for the electric stability of a semiconductor superlttice placed in a longitudinal electric field has been obtained using the drift–diffusion approximation. It is demonstrated that the account for the contact ohmicity yields a stability criterion that is different from that related to the negative differential conductivity.

Received: 2017 July 19
Approved: 2019 January 24
PACS:
73.63.-b Electronic transport in nanoscale materials and structures
Rissian citation:
В. Ч. Жуковский, Н. С. Прудских, С. Е. Головатюк, В. Д. Кревчик, М. Б. Семенов, А. В. Шорохов.
Критерий устойчивости полупроводниковой сверхрешетки в дрейфово-диффузионном приближении.
Вестн. Моск. ун-та. Сер. 3. Физ. Астрон. 2018. № 4. С. 63.
Authors
В. Ч. Жуковский$^1$, Н. С. Прудских$^2$, С. Е. Головатюк$^2$, В. Д. Кревчик$^3$, М. Б. Семенов$^3$, A. V. Shorokhov$^2$
$^1$Department of Theoretical Physics, Faculty of physics, Lomonosov Moscow State University
$^2$National Research Mordovia State University
$^3$Penza State University
Issue 4, 2018

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