Recovery of a P-I-N photodiode on illumination by a powerful light flash

The dissipation of mobile carriers accumulated in the I layer of a P-I-N photodiode after it is illuminated by strong light is considered. It is assumed that the recovery of the photodiode occurs at a constant back current flowing through the device. The results can be used to estimate the length of the carrier dissipation process at various intensities of the illumination preceding the dissipation.