Regular Article

Action of alpha particles on p-silicon and the photoelectric parameters of silicon n-p junctions

A.I. Akishin, G.M. Grigor'eva, L.I. Kolykhalova, L.B. Kreinin, A.P. Landsman, and V.G. Nazarov

Moscow University Physics Bulletin 1976. 31. N 4. P. 15

Article

Annotation

Experimental data are presented on the action of α-particles on p - silicon and silicon n-p junctions in the energy range from 0.4 to 25.2 MeV. A comparison is also made with proton action.

Authors

A.I. Akishin, G.M. Grigor'eva, L.I. Kolykhalova, L.B. Kreinin, A.P. Landsman, and V.G. Nazarov
Scientific-Research Institute of Nuclear Physics

Issue 4, 1976

Moscow University Physics Bulletin

Science News of the Faculty of Physics, Lomonosov Moscow State University

This new information publication, which is intended to convey to the staff, students and graduate students, faculty colleagues and partners of the main achievements of scientists and scientific information on the events in the life of university physicists.