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On the scattering of a two-dimensional gas of free charge carriers by coulomb centers at the surface of semiconductors

S.A. Venkstern and S.N. Kozlov

Moscow University Physics Bulletin 1979. 34. N 4. P. 7

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Annotation

We carry out a detailed analysis of different approaches to the problem of the scattering of a two-dimensional gas of electrons by an unscreened Coulomb potential. On the basis of numerical estimates for the oblique (100) surface of silicon, we draw the conclusion that the Born approximation is inapplicable, whereas the validity of the quasiclassical approximation is not in doubt. It is shown that in attempting a crude account of screening, several authors have used internally inconsistent premises.

Authors
S.A. Venkstern and S.N. Kozlov
Кафедра общей физики для химфака
Issue 4, 1979

Moscow University Physics Bulletin

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