On the kinetics of slow relaxation of charge on the surface of germanium over a wide time interval

The kinetics of slow relaxation of charge on actual surfaces of germanium с are investigated over a wide time interval (5x10^(-4)—10^5 sec). It is shown that the leakage of the excess charge of slow states in a vacuum 10^(-4)—10^(-6)Pa occupies 5 to 7 orders of time. The wide spectrum of characteristic time constants of the slow states Is explained by a distribution of the height and width of the barriers separating the slow states from the bulk of the semiconductor. Possible mechanisms of charge exchange between the slow states and the bulk of the semiconductor are discussed.