The production of an electron - temperature superlattice in a hot-electron semiconductor is considered in the linear approximation for the case where the absorption coefficient for the heating light is dependent on the electron temperature. The distribution of the electron temperature under static conditions has been derived, and also for free convection in the electron gas. The electromagnetic-field distribution has also been derived for the latter case. The critical light intensity at which the superlattice arises has been calculated.
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