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The mechanism of the storage effect when measuring the surface conductivity of germanium in transverse electric fields

R.V. Prudnikov and V.A. Matveev

Moscow University Physics Bulletin 1980. 35. N 2. P. 116

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Annotation

The mechanism of the storage effect in an atmosphere of Н$_2$О and NH$_3$ vapor in specimens of n - type germanium is investigated. It is shown that the storage effect arises in Н$_2$О vapor and is not present in NH$_3$ vapor and depends to a large extent on what sort of carriers are concentrated in the germanium surface. A new "proton" mechanism of the storage effect is proposed.

Authors
R.V. Prudnikov and V.A. Matveev
Issue 2, 1980

Moscow University Physics Bulletin

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