Annotation
The principal characteristics of Al—SiО$_2$/Si_{3}$N$_{4}$—Si based film-type MIS varactors suitable for operation within the rf range are examined. Results of an experimental study of a two-circuit balanced parametric oscillator employing MIS varactors are presented. It is established that this device differs in a number of ways from the familiar parametric oscillator employing barrier-type varactors.
© 2016 Publisher M.V.Lomonosov Moscow State University
Authors
V.F. Vinyarskii, V.F. Marchenko
Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
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