A study of the parameters of traps in amorphous hydrogenated silicon using the volt-farad characteristics

We study the localized states in amorphous hydrogenated silicon, obtained by HF discharge in monosilane, by the method of volt-farad characteristics of a Schottky diode in the frequency range 1-10 Hz. We determine the density of states for zero bias ($1,5\cdot 10^{17} ev^{-1}\cdot cm^{-3}$). This quantity agrees with the results of other methods. By comparing the experimental frequency dependence of the capacitance with the theoretical curve using two adjustable parameters, we determine the effective electron capture cross section of the trap ($10^{-14} cm^2$).