Photoexcitation of a direct-band semiconductor with differing effective electron and hole masses

Photoexcitation is examined for an inherent nondegenerate semiconductor with different masses for the electrons and holes. The study relates to three limiting cases of relaxation within the bands: slow, fast, and intermediate. Expressions are derived for the electron and hole concentrations and average energies. A study is made of the effects of electron-electron relaxation on the photoexcitation.