Annotation
A dispersion-model has been used for the level charge-reversal times to calculate the frequency-dispersion curves for the capacitance of a Schottky barrier on amorphous hydrogenated silicon. A comparison is made with experiment, and it is shown that the model explains the experimental results satisfactorily.
© 2016 Publisher M.V.Lomonosov Moscow State University
Authors
R.V. Prudnikov, A.P. Gus'kov, V.O. Abramov
Department of General Physics for the Chemistry Faculty, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Department of General Physics for the Chemistry Faculty, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Science News of the Faculty of Physics, Lomonosov Moscow State University
This new information publication, which is intended to convey to the staff, students and graduate students, faculty colleagues and partners of the main achievements of scientists and scientific information on the events in the life of university physicists.