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Frequency dispersion in the capacitance of a Schottky barrier on amorphous hydrogenated silicon

R.V. Prudnikov, A.P. Gus'kov, V.O. Abramov

Moscow University Physics Bulletin 1984. 39. N 6. P. 69

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Annotation

A dispersion-model has been used for the level charge-reversal times to calculate the frequency-dispersion curves for the capacitance of a Schottky barrier on amorphous hydrogenated silicon. A comparison is made with experiment, and it is shown that the model explains the experimental results satisfactorily.

Rissian citation:
Р.В. Прудников, А.П. Гуськов, В.О. Абрамов.
О частотной дисперсии ёмкости барьера Шоттки на аморфном гидрированном кремнии.
Вестн. Моск. ун-та. Сер. 3. Физ. Астрон. 1984. № 6. С. 61.
Authors
R.V. Prudnikov, A.P. Gus'kov, V.O. Abramov
Department of General Physics for the Chemistry Faculty, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Issue 6, 1984

Moscow University Physics Bulletin

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