A study is made of nonstationary states in an electron-hole plasma produced by optical absorption in a semiconductor with direct transitions. Allowance is made for recombination mechanisms involving phonon and/or radiative transitions as well as collisional ones (interband ones); the adiabatic approximation (slow recombination) is not used. Explicit conditions are derived for self-excited oscillations in the carrier concentration and in the electron and hole temperatures.
Department of Semiconductor Physics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
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