Annotation
We study the temperature dependence of the steady-state photoconductivity of undoped films of amorphous hydrogenated silicon for different spectral compositions and intensities of the exciting light. It is observed that the depth of the temperature quenching of photoconductivity is determined by the intensity and energy of a quantum of the exciting light. The observed features agree well with the model of intercenter recombination of charge carriers.
© 2016 Publisher M.V.Lomonosov Moscow State University
Authors
I.A. Kurova, N.N. Ormont, V.D. Podrugina, К.B. Chitaya
Department of Semiconductor Physics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Department of Semiconductor Physics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
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