Annotation
A study has been made of the effects of evacuation, transverse electric fields, illumination, and temperature change on acoustoelectronic storage in a layered piezoelectric-semiconductor structure. Some parameters have been determined for the surface states in the semiconductor, and information has been obtained on the trapping and recombination kinetics.
© 2016 Publisher M.V.Lomonosov Moscow State University
Authors
I.Yu. Solodov, G.Yu. Timofeeva
Department of Acoustics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Department of Acoustics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
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