Annotation
It is shown that an additional static random field may be formed in a relaxation semiconductor under the effect of an external electrical field and light.
© 2016 Publisher M.V.Lomonosov Moscow State University
Authors
Yu.P. Drozhzhov
Department of Semiconductor Physics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Department of Semiconductor Physics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Science News of the Faculty of Physics, Lomonosov Moscow State University
This new information publication, which is intended to convey to the staff, students and graduate students, faculty colleagues and partners of the main achievements of scientists and scientific information on the events in the life of university physicists.