The nature of traps in an oxide film on a gallium arsenide surface

The processes of trap recharging in an anode oxide on a GaAs surface with illumination are investigated using a method of contact difference in potentials. It is shown that the concentration of traps for electrons and holes and the degree of defectiveness of the transitional field are altered depending on the conditions for oxide production and subsequent processing. Hypotheses about the nature of hole capture centers are formulated.