Charge transfer processes in $Ge-GeO_2$ structures with the effects of nano- and picosecond light pulses

The dependences of optical charging of a germanium surface on the radiation exposure and temperature are studied in a broad range of intensities ($Р=10^{-4}-10^9 Вт/см^2$) and duration ($\tau = 3\cdot 10^{-11}-10^2с$) of light. It is shown that the value of the charge photoinjected into the oxide layer is determined by the exposure $P_{\tau}$ and is not a function of the intensity of the light. The temperature of the fine ($\sim$20 nm) surface layer of the sample is estimated directly at the moment of the laser pulse.