A sharp reduction is discovered in the intensity of photoluminescence in fields of a-Si:H films bordering on a metal. Electron diffraction is investigated to explain this effect. Correct normalization of the interferential function is used to calculate the radial functions of distribution. It was found that the samples differ in terms of the coordination numbers and the radii of the first coordinational sphere. Differences in the spectrum of the density of states of the a-Si:H layers on different substrates are associated with this.
Department of General Physics for the Chemistry Faculty, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
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