Extrinsic electroluminescence in GaAs: V is discovered at $\epsilon >7\cdot 10^3$ V/cm and T = 80-300 K. A close correspondence of the form of the bands of the electroluminescence to the absorption spectra in the range $h\nu \sim 1,1$ eV and the photoluminescence spectrum in the range $h\nu \sim 0,7$ eV is observed. It is shown that electroluminescence in the range of $\sim$0,7 eV is caused by intracenter transitions of the $V^0$ atoms, while in the $\sim$1.1 range it is caused by transitions of the $V^-$ atoms.
Department of Semiconductor Physics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Science News of the Faculty of Physics, Lomonosov Moscow State University
This new information publication, which is intended to convey to the staff, students and graduate students, faculty colleagues and partners of the main achievements of scientists and scientific information on the events in the life of university physicists.