Measuring light radiation intensity using a parametron

The experimental characteristics of a digital photocapacitance sensor of weak light radiation, in which planar $Аl—SiO_2\cdot Si_3N_4—Si$ structures are used, are cited. The radio frequency part of the sensor is a parametric oscillator built on the basis of a balance circuit with metal-dielectric-semiconductor structures, one of which is illuminated by light. A change in the intensity of the light changes the balance of the circuit; the intensity is proportional to the probability of fall out of one of the stable phases of the subharmonic with multiple triggering of a periodically excited parametric loop oscillator.