Brief Report

The correlation between slow surface- conductivity relaxation and low- frequency current noise in ion- implemented silicon films

Р.К. Kashkarov, А.V. Petrov, I.G. Stoyanova, and А.V. Filatov

Moscow University Physics Bulletin 1988. 1988. N 5. P. 100

Article

Annotation

Ar^+ implantation in Si is accompanied Ьу the formation of adsorptiontype defect complexes at the surface at doses above 10^11 ion·cm^{-2}, which accelerates the surface conductivity relaxation and markedly increases the l/f type current noise.

Authors

Р.К. Kashkarov, А.V. Petrov, I.G. Stoyanova, and А.V. Filatov
Department of General Physics and Wave Processes

Issue 5, 1988

Moscow University Physics Bulletin

Science News of the Faculty of Physics, Lomonosov Moscow State University

This new information publication, which is intended to convey to the staff, students and graduate students, faculty colleagues and partners of the main achievements of scientists and scientific information on the events in the life of university physicists.