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Influence of electron injection from Si into $SiO_2$ on the electrical instability of metal- dielectric - semiconductor structures

Yu.N. Kasumov and S.N. Kozlov

Moscow University Physics Bulletin 1989. 1989. N 4. P. 88

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Annotation

The laws of electrical instability of silicon metal-dielectric-semiconductor structures are studied as а function of the quantity of electrons injected from silicon into the $SiO_2$ layer and the temperature. It is shown that the electrical stability of inj ection-degraded structures is determined bу the superposition of two effects: the appearance of an additional mobile ionic charge and the generation and recharging of "slow" electron states.

Rissian citation:
Ю.Н. Касумов, С.Н. Козлов.
Влияние инжекции электронов из Si в $SiO_2$ на электрическую нестабильность МДП-структуры.
Вестн. Моск. ун-та. Сер. 3. Физ. Астрон. 1989. № 4. С. 73.
Authors
Yu.N. Kasumov and S.N. Kozlov
Department of General Physics for the Chemistry Faculty
Issue 4, 1989

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