Heating of electrons in compensated semiconductor Ge<Au, Sb>

The temperature dependence of the Hall mobility in a compensated semiconductor Ge<Au, Sb> exposed to infrared illumination and in the dark was studied at 5 K < T < 100 K. The effect of electric field on the Hall mobility at low temperatures was also investigated. The growth and saturation of the mobility during the infrared illumination at T < 8 К were shown to be due to a photostimulated heating of electrons; the ratio $\tau_{\epsilon}/\tau$ was evaluated.