$Ar^+$ ion implantation-induced production in the dielectric layer of $Ge-GeO_2$ structures

$Ar^+$ ion implantation into a $GeO_2$ film on a Ge surface has been found to induce the generation of hole traps in the ion retardation layer and electron traps in the $GeO_2$ layer at the boundary with Ge, this being manifested by an increased instability of the surface charge under illustration.