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Current-voltage characteristics and dynamics of breakdown development in Bi-Sb semiconductor alloys upon uniaxial compression

E.V. Bogdanov, D.L. Shishkin

Moscow University Physics Bulletin 1990. 45. N 5. P. 72

  • Article
Annotation

The effect of uniaxial compression along the binary and bisector axes (up to deformations of -0.2%) on the current-voltage characteristics, the dynamics of breakdown development, and the lifetime of nonequilibrium charge carriers was experimentally studied for multivalleу n- and p-type $Bi_{1-x}Sb_x$ semiconductor alloys (0.10 $\leq x \leq$ 0.167) at a temperature of 4.2 K. As a whole, the results can be qualitatively explained on the basis of the available data on compression-induced variation of the energy spectra of these materials.

Authors
E.V. Bogdanov, D.L. Shishkin
Department of Low-Temperature and Superconductivity Physics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Issue 5, 1990

Moscow University Physics Bulletin

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