Annotation
A new, defect-strain mechanism of subboundary formation during laser-induced recrystallization of semiconductor films is proposed. It underlies the theory yielding an explicit analytic expression for the separation between subboundaries as a function of film thickness and the melt zone velocity. The theoretical results obtained show good agreement with experiment.
© 2016 Publisher M.V.Lomonosov Moscow State University
Authors
V.I. Emelyanov, A.A. Sumbatov
Department of General Physics and Wave Processe, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia Institute of Crystallography (USSR Acad. Sci.)
Department of General Physics and Wave Processe, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia Institute of Crystallography (USSR Acad. Sci.)
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