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Effect of water vapor adsorption on electrophysical properties of Schottky barrier based on amorphous hydrated silicon

R.V. Prudnikov

Moscow University Physics Bulletin 1991. 46. N 1. P. 102

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Annotation

The effect of the adsorption of water vapors on the current-voltage characteristics and the frequency dispersion of the capacitance of an a-Si:H Schottky barrier has been studied. It is suggested that the orientational polarizability of water molecules decreases the height of the barrier and, besides, surface hydration affects the distribution of the density of localized electron states due to the saturation of broken silicon bonds with hydroxyl groups.

Authors
R.V. Prudnikov
Department of General Physics and Molecular Electronics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Issue 1, 1991

Moscow University Physics Bulletin

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