Annotation
The electronic structure, the electrical resistivity, and the Hall coefficient of amorphous $Cu_{1-x}Zr_x$ alloys were calculated in the framework of the coherent locator approximation for the $s-d$-model with consideration for the off-diagonal disorder. The calculation results on the concentration dependence of the electrical resistivity and the Hall coefficient are in agreement with the available experimental data.
© 2016 Publisher M.V.Lomonosov Moscow State University
Authors
A.V. Vedyaev, A.B. Granovskii, I.Kh. Khalilov, S.A. Ninalalov, D.Kh. Imamnazarov, M.M. Gekhtman, Jr
Department of Magnetism, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Department of Magnetism, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia