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Electrical resistivity and Hall effect in amorphous $Cu_{1-x}Zr_x$ alloys in the $s-d$-model (the coherent locator approximation)

A.V. Vedyaev, A.B. Granovskii, I.Kh. Khalilov, S.A. Ninalalov, D.Kh. Imamnazarov, M.M. Gekhtman, Jr

Moscow University Physics Bulletin 1991. 46. N 5. P. 59

  • Article
Annotation

The electronic structure, the electrical resistivity, and the Hall coefficient of amorphous $Cu_{1-x}Zr_x$ alloys were calculated in the framework of the coherent locator approximation for the $s-d$-model with consideration for the off-diagonal disorder. The calculation results on the concentration dependence of the electrical resistivity and the Hall coefficient are in agreement with the available experimental data.

Authors
A.V. Vedyaev, A.B. Granovskii, I.Kh. Khalilov, S.A. Ninalalov, D.Kh. Imamnazarov, M.M. Gekhtman, Jr
Department of Magnetism, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Issue 5, 1991

Moscow University Physics Bulletin

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