Conduction anisotropy induced by the electric field in narrow-gap Bi-Sb semiconductors

Heating of charge carriers in specimens of $n$- and $p$-type Bi-Sb semiconductor alloys whose axes are noncoincident with the crystallographic axes, gives rise to a transverse electric field. The specific features of this phenomenon were qualitatively explained in term of the theory of the Sasaki-Shibuya effect and the well-known concepts of the energy spectrum of these narrow-gap semiconductors.