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On the theory of frequency dependence of the conductivity of a strongly doped compensated semiconductor

V.F. Shitikov

Moscow University Physics Bulletin 1992. 47. N 2. P. 74

  • Article
Annotation

It is established that in a broad frequency band the real part of the conductivity of a strongly doped compensated semiconductor is described by the $Re\sigma(\omega)\sim \omega^s$, where $s < 1$. The frequency and temperature dependence of the exponent $s$ is discussed.

Authors
V.F. Shitikov
Department of Semiconductor Physics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Issue 2, 1992

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