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А new method of determination of photoelectric parameters of semiconductor wafers with p-n junctions

0.G. Koshelev and V.A. Morozova

Moscow University Physics Bulletin 1996. N 6. P. 62

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Annotation

А new method has been proposed for the determination of the diffusion length and lifetime of minority carriers in wafers with p-n junctions. Nonequilibrium carriers are excited Ьу two light beams modulated Ьу а single frequency, one of which is absorbed heavily and the other one readily. The conditions of modulation of these beams are chosen such that the total а.с. voltage across the p-n junction vanishes. The diffusion length is determined from the ratio of light beam intensities and the lifetime is determined from the frequency dependence of this ratio or from the phase shift between the modulations. The numerical computations showed that the method can bе applied to silicon solar cells. The advantages of the method are discussed.

Rissian citation:
О.Г. Кошелев, В.А. Морозова.
Новый метод определения фотоэлектрических параметров полупроводниковых пластин с р—n переходами.
Вестн. Моск. ун-та. Сер. 3. Физ. Астрон. 1996. № 6. С. 73.
Authors
0.G. Koshelev and V.A. Morozova
Departmeпt of Semicoпductor Physics
Issue 6, 1996

Moscow University Physics Bulletin

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