Effect of strong electric field and IR radiation on long-term relaxation of piezoresistance in $p$-GaAs/AlGaAs

Infrared radiation and strong electric field effects on uniaxial compression-induced long-term resistance relaxations of two-dimensional holes at the $p$-GaAs /Al$_{0,5}$Ga$_{0,5}$As heterointerface at 4.2 and 77 K were measured. A sharp decrease in relaxation times under charge carriers heating by illumination and, at 77 K, by electric field was observed. At 4.2 K, an electric field over 200 V/cm did by itself cause sample switching to a metastable high-resistance state.