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Effect of strong electric field and IR radiation on long-term relaxation of piezoresistance in $p$-GaAs/AlGaAs

E.V. Bogdanov$^1$, K.I. Kolokolov$^1$, V.N. Kravchenko$^1$, N.Ya. Minina$^1$, A.M. Savin$^1$, O.P. Hansen$^2$

Moscow University Physics Bulletin 1998. 53. N 1. P. 48

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Annotation

Infrared radiation and strong electric field effects on uniaxial compression-induced long-term resistance relaxations of two-dimensional holes at the $p$-GaAs /Al$_{0,5}$Ga$_{0,5}$As heterointerface at 4.2 and 77 K were measured. A sharp decrease in relaxation times under charge carriers heating by illumination and, at 77 K, by electric field was observed. At 4.2 K, an electric field over 200 V/cm did by itself cause sample switching to a metastable high-resistance state.

Rissian citation:
Е.В. Богданов, К.И. Колоколов, В.Н. Кравченко, Н.Я. Минина, А.М. Савин, О.П. Хансен.
Воздействие сильного электрического поля и ИК-излучения на долговременные релаксации пьезосопротивления в $p$-GaAs/AlGaAs.
Вестн. Моск. ун-та. Сер. 3. Физ. Астрон. 1998. № 1. С. 40.
Authors
E.V. Bogdanov$^1$, K.I. Kolokolov$^1$, V.N. Kravchenko$^1$, N.Ya. Minina$^1$, A.M. Savin$^1$, O.P. Hansen$^2$
$^1$Department of Low-Temperature and Superconductivity Physics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
$^2$Oersted Laboratory, Niels Bohr University, Copenhagen1 Denmark
Issue 1, 1998

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