Nonmonotone kinetics of $\alpha$-Si:H film conductivity variations under illumination at elevated temperature

Light intensity effect on the kinetics of dark conductivity ($\sigma_d$) variations during and after illumination has been studied for $\alpha$-Si:H films undoped and weakly doped with boron. The observed kinetics was nonmonotone at high and monotone at low light intensities. The influence oflight intensity on the kinetics of $\sigma_d$ variations can be explained by the formation and thermal annealing of photoinduced broken bonds and impurity activation and deactivation not involving light annealing of broken bonds.