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Anomalous kinetics of Stabler-Wronski effect in high-resistance $a$-Si:H layers weakly doped with boron

I.A. Kurova, N.N. Ormont, A.L. Gromadin

Moscow University Physics Bulletin 1999. 54. N 1. P. 89

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An anomalous nonmonotonic kinetics of the Stabler-Wronski effect has been discovered for an $a$-Si:H film weakly doped with boron, whose Fermi level was situated near the middle of the forbidden band. Anomalous was the behavior of dark conduction, which was higher than its equilibrium value and exhibited similar nonmonotonic kinetics during and after illumination. The model of formation and relaxation of fast and slow metastable states (broken bonds in silicon and photoactivated boron atoms) was used to show that, after switching off the light, the type of conductivity could change from electronic to hole one, this change being responsible for the anomalous relaxation kinetics.

Rissian citation:
И.А. Курова, Н.Н. Ормонт, А.Л. Громадин.
Аномальная кинетика эффекта Стеблера-Вронского в высокоомных слоях $a$-Si:H, слабо легированных бором.
Вестн. Моск. ун-та. Сер. 3. Физ. Астрон. 1999. № 1. С. 67.
Authors
I.A. Kurova, N.N. Ormont, A.L. Gromadin
Department of Semiconductor Physics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Issue 1, 1999

Moscow University Physics Bulletin

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