Annotation
Vertical electron transport in intentionally disordered semiconductor superlattices in the electric field has been studied theoretically. Numerical values of the coefficients for electron tunneling through thin-layer superlattices with different types of disorder in a finite field have been obtained.
© 2016 Publisher M.V.Lomonosov Moscow State University
Authors
A.V. Dmitriev, 0.V. Pupysheva
Department of Low-Temperature Physics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Department of Low-Temperature Physics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
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