Faculty of Physics
M.V. Lomonosov Moscow State University
Regular Article

On the determination of the ZnAs$_2$ band structure parameters

V.A. Morozova, S.F. Marenkin, 0.G. Koshelev

Moscow University Physics Bulletin 2000. 55. N 2. P. 62

  • Article

A method for taking into account light scattering in ZnAs$_2$ and obtaining the $\alpha^\parallel(h\nu)$ absorption spectrum was suggested. At the $E\parallel c$ polarization, the absorption edge was shown to be determined by indirect and direct allowed transitions with the energy difference 64 meV between them, which involved exciton states. For both transitions, in the temperature range $80 \div 300$ K, the forbidden band width was determined.

Rissian citation:
В.А. Морозова, С.Ф. Маренкин, О.Г. Кошелев.
Об определении параметров зонной структуры ZnAs$_2$.
Вестн. Моск. ун-та. Сер. 3. Физ. Астрон. 2000. № 2. С. 49.
V.A. Morozova, S.F. Marenkin, 0.G. Koshelev
Department of Semiconductor Physics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Issue 2, 2000

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