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Phonon-associated vertical electron hopping transport in superlattices with intentional disorder

К.E. Borisov, I.P. Zvyagin, A.G. Mironov

Moscow University Physics Bulletin 2003. 58. N 4. P. 66

  • Article
Annotation

The hopping transition rate governing the phonon-associated conductivity in superlattices with vertical disorder has been calculated, and the temperature dependence of an important hopping transport theory parameter, namely, the preexponential factor (i.e., the "frequency of hopping attempts") in the expression for the transition rate obtained. It has been demonstrated that the frequency of hopping attempts can strongly depend on temperature, the dependence varying from quadratic (at high temperatures within the classical phonon statistics domain) to linear at low temperatures.

Authors
К.E. Borisov, I.P. Zvyagin, A.G. Mironov
Department of Semiconductor Physics, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Issue 4, 2003

Moscow University Physics Bulletin

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