Photoconduction is discovered in a-Si:H films subjected to thermal annealing at а temperature Та ≥ 560°С in hydrogen. In the low-temperature region, the dark conduction of the annealed films relies on а hopping mechanism with variable hopping distance. The presence of hopping transfer points to а high density of states of broken bonds in silicon (р~10^{19}cm^{-3} eV^{-1}). It is demonstrated that the development of photoconduction in the films of interest following their annealing may bе due to the formation of а photosensitive layer having а microcrystalline structure.
Department of Semiconductor Physics
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