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Force fields for the molecular dynamic simulation of the deposition of the silicon dioxide film

F.V. Grigoriev$^{1,2}$

Moscow University Physics Bulletin 2015. 15. N 6. P. 521

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Annotation

In this work we compare two force fields that are intended for the molecular dynamics simulation of the process of the deposition of silicon dioxide thin films. Analysis of the structural characteristics (the density and radial distribution function) of a glassy silicon dioxide cluster that was used as a substrate and a deposited film is carried out. It is shown that the DESIL force field in which the Van der Waals interaction is described by the Lennard–Jones potential turns out to be more suitable for modeling the process of deposition

Received: 2015 June 22
Approved: 2016 January 22
PACS:
80.00.00 INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY
Rissian citation:
Ф.В. Григорьев.
Силовые поля для молекулярно-динамического моделирования процесса напыления пленок диоксида кремния.
Вестн. Моск. ун-та. Сер. 3. Физ. Астрон. 2015. № 6. С. 93.
Authors
F.V. Grigoriev$^{1,2}$
$^1$Research Computing Center, Moscow State University, Moscow, 119991 Russia
$^2$National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow, 115409 Russia
Issue 6, 2015

Moscow University Physics Bulletin

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