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Modeling and Simulation of Experimentally fabricated QDSSC using ZnS as light absorbing and blocking layer

M. Mehrabian$^1$, S. Dalir$^2$

Moscow University Physics Bulletin 2017. 72. N 4. P. 351

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Annotation

Two main factors which limit the power conversion efficiency of solar cells are light absorption and recombination processes. In photovoltaic (PV) devices, low energy photons cannot be absorbed and excite electrons from valance band to conduction band, hence do not contribute to the current. On the other hand, high energy photons cannot be efficiently used due to a poor match to the energy gap. Existence of charge recombination in PV devices causes the low conversion performance, which is indicated by the low open-circuit voltage (VOC). Using a blocking layer in system could effectively reduce the recombination of charge carriers. In this study, we simulated a solar cell with ITO/ZnO/P3HT&PCBM/Ag structure. To prevent the charge recombination, a ZnS QD layer was used which acts as a light absorbing and a recombination blocking layer in the ITO/ZnO film/ZnS QD/P3HT&PCBM/Ag structure. The simulated J-V characteristics of solar cells showed a close match with the experimental results. Simulate data showed an increase of conversion efficiency in ZnS QDSSC from 1.71 % to 3.10 %, which is relatively 81.28% increase.

Received: 2016 July 2
Approved: 2017 October 2
PACS:
42.65.-k Nonlinear optics
42.90.+m Other topics in optics
68.35.bg Semiconductors
Rissian citation:
M. Mehrabian, S. Dalir.
Modeling and Simulation of Experimentally fabricated QDSSC using ZnS as light absorbing and blocking layer.
Вестн. Моск. ун-та. Сер. 3. Физ. Астрон. 2017. № 4. С. 351.
Authors
M. Mehrabian$^1$, S. Dalir$^2$
$^1$Faculty of Basic Science, University of Maragheh, PO Box 55181-83111, Maragheh, Iran
$^2$Department of Materials Engineering, Faculty of Engineering, University of Maragheh, PO Box 55181-83111, Maragheh, Iran
Issue 4, 2017

Moscow University Physics Bulletin

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