Nonlinear ultrasonic methods for evaluation of the s trength of brittle materials
Nonlinear ultrasonic methods for evaluation of the s trength of brittle materials
L.K. Zarembo, V.А. Krasil'nikov, and I.Е. Shkol'nik
The study demonstrates that from effective elastic moduli of second, third, and fourth order, the compressive and tensile strengths of brittle materials can bе estimated.
Show AbstractImpedance measurement of hypersound velocity and absorption in thin -films
Impedance measurement of hypersound velocity and absorption in thin -films
К.N. Baranskii, Z.А. Magomedov, S.V. Pavlov, I. у. Palamarchuk, G.А. Sever, and А.D. Shpil'kin
An application of the impedance method of acoustic sound velocity and absorption measurements in thin films is studied. А method is proposed for measuring sound velocity and absorptance in case of reflection from one or two thin layers.
Show AbstractHigh- energy electron emission generated bу $Ar^+$ bombardment of thin tungsten and molybdenum single crystals
High- energy electron emission generated bу $Ar^+$ bombardment of thin tungsten and molybdenum single crystals
Е.Е. Azizov, V.G. Babaev, N.В. Brandt, and V.А. Mashtakov
Energy spectra of electrons emitted bу thin tungsten and molybdenum single crystals on the side opposite to the face bombarded bу argon ions have been measured.
Show AbstractWeakly bound states of а two - particle system in an external field
Weakly bound states of а two - particle system in an external field
V.V. Komarov, А.М. Popova, and V.G. Airapetyan
А method is proposed for estimating the number of weakly bound states of the energy operator of а system of two quantum- mechanical particles in an external field.
Show AbstractResonant photoionization of helium- like ions in the region between the second and third thresholds. Helium- like lithium
Resonant photoionization of helium- like ions in the region between the second and third thresholds. Helium- like lithium
S.М. Burkov, N.А. Letyaev, and S.I. Strakhova
Calculations are reported of the total and partial cross sections for the photoionization of the ion $Li^+$, the parameters of resonances in the total and partial cross sections, the anisotropy coefficient of the angular distributian of photoelectrons, and the alignment of the ion $Li^{+ +}$ in the n = 2 state in the region between the second and third thresholds.
Show AbstractRydberg atoms and the production of monodirectional electrons
Rydberg atoms and the production of monodirectional electrons
V.А. Namiot and Е.Р. Skorokhod
It is shown that, under certain definite conditions, electrons producedmas а result of the ionization of Rydberg atoms сап bе highly monochromatic and have а very small angular spread.
Show AbstractStochastic modulation in а circuit incorporating an MIS structure and exposed to light
Stochastic modulation in а circuit incorporating an MIS structure and exposed to light
V.F. Marchenko
The mechanism responsible for stochastic modulation in а resonant circuit in which the capacitance is an MIS structure exposed to light is discus sed. The presence of stochastic oscillations has been confirmed experimentally at points at which the resonance curve is multivalued.
Show AbstractRange of validity of the geometric - optics approximation in randomly inhomogeneous media
Range of validity of the geometric - optics approximation in randomly inhomogeneous media
V.D. Gusev, Е.V. Petukhova, and L.I. Prikhod'ko
The condition of noncrossing rays is used to develop а new criterionfor the validity of the geometric-optics approximation in randomly inhomogeneous media. The condition obtained extends the possibilities of the method in the solution of scattering problems.
Show AbstractParametric conversion of microwave and ultrasound in $KTaO_3$ dielectric resonators
Parametric conversion of microwave and ultrasound in $KTaO_3$ dielectric resonators
G.V. Belokopytov, I.V. Ivanov, V.N. Semenenko, and V.А. Chistyaev
Pararnetric electrostriction effects such as the conversion of ultrasound into microwa ves and the parametric amplification of microwaves has been produced experirnentally in potassiurn tantalate resonators.
Show AbstractSpatial resolution under the conditions of local catholuminescence inthe scanning electron microscope as а function of the electro-physical parameters of the sample
Spatial resolution under the conditions of local catholuminescence inthe scanning electron microscope as а function of the electro-physical parameters of the sample
А.R. Gareeva, V.I. Petrov, and G.А. Chizhov
The point-source approximation is used to analyze the generation of electron-hole pairs in а semiconductor. It is shown that the spatial resolution depends not only on the diffusion length of minority carriers, but also on the rate of surface recombination and the absorption of radiation in the medium.
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