Experimental uncertainties in the absorption spectra of solutions of dyes in the presence of adsorption
Experimental uncertainties in the absorption spectra of solutions of dyes in the presence of adsorption
N.R. Senatorova, B.D. Ryzhikov
Adsorption on glass in different water solutions of dyes has been measured. The amount of adsorption was found to be correlated with the associative power of the materials.
Show AbstractMicrocomputer controlled picosecond laser spectrometer for studying semiconductor surfaces
Microcomputer controlled picosecond laser spectrometer for studying semiconductor surfaces
A.Yu. Abdullaev, S.V. Govorkov, V.N. Zadkov, G.I. Petrov, I.L. Shumai
A description is given of a universal laser spectrometer for non-linear-optics diagnostics of semiconductor surfaces. The system is fully automatic and is controled by the DVK-2 computer.
Show AbstractMolecular motion and spin-lattice relaxation in 4-n-hexyloxyphenyl-4-n-decyclooxybenzoate
Molecular motion and spin-lattice relaxation in 4-n-hexyloxyphenyl-4-n-decyclooxybenzoate
V.P. Denisov, G.P. Petrova, Yu.M. Petrusevich, O.P. Revokatov
Correlation times and activation energies have been determined for the rotational motions of individual molecular groups in HOPDOB. They are compared with analogous quantities for translational motion, deduced from optical experiments.
Show AbstractDielectric properties of TMATC-Zn crystals in the region of the commensurable-incommensurable phase transition point
Dielectric properties of TMATC-Zn crystals in the region of the commensurable-incommensurable phase transition point
B.A. Strukov, E.P. Kurulenko
A study is reported of anomalies in the permittivity of ${N(CH_3)_4}_2ZnCl_4$ (TMATC-Zn) crystals in the region of the commensurate-incommensurate phase transition point. It is reported that the Curie-Weiss law is valid for permittivity in the incommensurate phase and that there is an anomalous temperature hysteresis of the phase transition point and permittivity.
Show AbstractAvalanche "edge" injection of electrons in silicon MOS structures
Avalanche "edge" injection of electrons in silicon MOS structures
S.N. Kozlov, A.N. Nevzorov, A.Yu. Potapov
The effect of nonuniform avalanche injection of electrons from Si into $SiO_2$ on the threshold avalanche voltage, the generation of surface states, and surface generation has been investigated.
Show AbstractEffect of temperature on the fixing of the main walls in ferrite garnet films
Effect of temperature on the fixing of the main walls in ferrite garnet films
A.G. Shishkov, E.N. Il'icheva, N.B. Shirokova, V.I. Kozlov, Yu.N. Fedyunin, G.A. Bazhazhin
It is shown that the coercive force of a ferrite-garnet film is a temperature-sensitive parameter because of the temperature dependence of the anisotropy field and the energy of the walls. The "period" and "amplitude" of the magnetic potential profile of moving domain walls undergo a change near the compensation point, which is due to the change in the magnetostatic interaction between the domains.
Show AbstractRelaxation properties of melts of branched polymer molecules
Relaxation properties of melts of branched polymer molecules
T.A. Yurasova, A.N. Semenov
The model employed is that of a "polymer chain in an array of obstacles." The effective potential representing the average effect of ambient polymer molecules on a given branch is determined. The stress relaxation time in a melt of branched chains is found.
Show AbstractDetermination of the electrophysical parameters of a highly doped silicon layer on a high-resistance substrate from the transmission of the layer for long-wave infrared radiation
Determination of the electrophysical parameters of a highly doped silicon layer on a high-resistance substrate from the transmission of the layer for long-wave infrared radiation
O.G. Koshelev, Т.B. Pleskacheva
A nonintrusive method is proposed for the determination of the surface resistance and mean free time of carriers in a thin layer of a doped semiconductor deposited on a high-resistance substrate whose thickness is insufficient for the observation of the plasma minimum. The method is based on measurement of the infrared transmission of silicon wafers in the wavelength range 20-130 μm.
Show AbstractOptimum choice of the parameters in the Mittag-Leffler expansion for a given region of observation
Optimum choice of the parameters in the Mittag-Leffler expansion for a given region of observation
N.A. Chuikova
A determination is reported of the parameters of the Mittag-Leffler expansion that result in the optimum expansion for the reciprocal distance that converges more rapidly tban the universal expansion by the factor $e^{20/l_1^2}$, where $l_1$ is the distance between the nearest mountains and the point of observation. The expansion converges more rapidly at a given point than the Laplace series.
Show AbstractNecessary relation between the metric of flat space and the metric of curved space in the theory of graviation "on a flat background"
Necessary relation between the metric of flat space and the metric of curved space in the theory of graviation "on a flat background"
A.A. Vlasov
It is emphasized that there must a covariant relationship between the metric of flat space and the metric of curved space in the theory of graviation "on a flat background." It is shown that this distinguishes the relativistic theory of gravitation from the general theory of relativity "on a flat background."
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