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Frequency dispersion in the capacitance of a Schottky barrier on amorphous hydrogenated silicon

Frequency dispersion in the capacitance of a Schottky barrier on amorphous hydrogenated silicon

R.V. Prudnikov, A.P. Gus'kov, V.O. Abramov

Moscow University Physics Bulletin 1984. 39. N 6. P. 69

A dispersion-model has been used for the level charge-reversal times to calculate the frequency-dispersion curves for the capacitance of a Schottky barrier on amorphous hydrogenated silicon. A comparison is made with experiment, and it is shown that the model explains the experimental results satisfactorily.

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X-Ray diffraction in a finite crystal with linear lattice-constant variation

X-Ray diffraction in a finite crystal with linear lattice-constant variation

A.V. Kolpakov, V.I. Punegov

Moscow University Physics Bulletin 1984. 39. N 6. P. 73

The dynamic theory of X-ray diffraction is considered for a crystal of finite thickness with linear variation in the lattice period for the Bragg case. There is shown to be an analogy between X-ray diffraction in such a crystal and light diffraction at a slit in the Fresnel case.

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Preferred nuclear orientation arising in beta decay in a steady magnetic field

Preferred nuclear orientation arising in beta decay in a steady magnetic field

V.N. Rodionov, I.M. Ternov, O.F. Dorofeev

Moscow University Physics Bulletin 1984. 39. N 6. P. 76

A preferred spin orientation is shown to occur in nuclei arising from beta decay in a strong steady magnetic field. A study is made of the conditions under which the proton polarization in the reaction $n \to p+e+\bar{\nu}$ is close to 100%.

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Mixing of the $2S_{1/2}$ and $2P_{1/2}$ levels in hydrogen

Mixing of the $2S_{1/2}$ and $2P_{1/2}$ levels in hydrogen

V.V. Starshenko, R.N. Faustov

Moscow University Physics Bulletin 1984. 39. N 6. P. 79

A calculation is performed on proton-recoil effects in the mixing of the $2S_{1/2}$ and $2P_{1/2}$ levels in hydrogen due to the weak interaction.

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The charge on nickel oxide in electron-stimulated neutral molecule desorption

The charge on nickel oxide in electron-stimulated neutral molecule desorption

G.G. Fedorov, V.F. Vasil'ev

Moscow University Physics Bulletin 1984. 39. N 6. P. 82

A study has been made of the charging mechanism for nickel oxide in electron-stimulated neutral-molecule desorption. It has been found that the charging is not related either to the electron-stimulated desorption of positive ions or to the trapping of the bombarding electrons at traps in the surface. A charging mechanism is proposed.

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The propagation of sound in a vibrationally nonequilibrium gas

The propagation of sound in a vibrationally nonequilibrium gas

A.I. Osipov, A.V. Uvarov

Moscow University Physics Bulletin 1984. 39. N 6. P. 85

A dispersion equation is derived for the propagation of sound in a nonequilibrium vibrationally excited gas with allowance for the pumping and heat loss; the condition for sound amplification is derived. Numerical estimates are made that indicate that the effect should be observable.

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One-parameter equations in describing average-velocity profiles for turbulent flows of weak polymer solutions

One-parameter equations in describing average-velocity profiles for turbulent flows of weak polymer solutions

V.P. Petrov, V.I. Sugrei, Yu.L. Shchev'ev

Moscow University Physics Bulletin 1984. 39. N 6. P. 89

Introducing a weak polymer solution into a flowing liquid reduces the resistance coefficient, thickens the viscous sublayer, and increases the velocity gradients. To describe the average-velocity profile in a turbulent flow, one can use one-parameter equations in which the adjustable constants in the logarithmic distributions for the average velocities are expressed in terms of the thickness of the viscous sublayer in the transitional region and the turbulent core, that thickness being $2/\kappa$ where $\kappa$ is the Karman parameter.

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The relation between the even photomagnetic effect and the photo-Hall effect

The relation between the even photomagnetic effect and the photo-Hall effect

V.I. Nikolaev, G.N. Sever, T.V. Shilova

Moscow University Physics Bulletin 1984. 39. N 6. P. 93

The paper discusses the scope for using the even photomagnetic effect PME in examining the properties of semiconductor materials in cases where one usually employs the photo-Hall PH effect. One of the components of the even PME involves the same mechanism as the PH, and therefore similar information is provided by the even PME and PH regarding the properties of the semiconductor material. This is confirmed by measurements on the even PME and PH, and also on the odd PME in the same geometry for p-type Ge and Si.

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Effects of atomic collisions on radiation line width

Effects of atomic collisions on radiation line width

V.A. Klivadenko

Moscow University Physics Bulletin 1984. 39. N 6. P. 97

The quantum kinetic equation for the density-matrix elements has been used in calculating the line width given by a gas laser on the basis of atomic collisions in the working medium. A strong-collision model has been used in deriving analytic expressions for the intensities of the amplitude and phase fluctuations in the polarization. The results for strong fields are in qualitative agreement with experiment.

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The local configuration-interaction method for atoms and molecules

The local configuration-interaction method for atoms and molecules

S.V. Lyudkovskii

Moscow University Physics Bulletin 1984. N 5.