Frequency dispersion in the capacitance of a Schottky barrier on amorphous hydrogenated silicon
Frequency dispersion in the capacitance of a Schottky barrier on amorphous hydrogenated silicon
R.V. Prudnikov, A.P. Gus'kov, V.O. Abramov
A dispersion-model has been used for the level charge-reversal times to calculate the frequency-dispersion curves for the capacitance of a Schottky barrier on amorphous hydrogenated silicon. A comparison is made with experiment, and it is shown that the model explains the experimental results satisfactorily.
Show AbstractX-Ray diffraction in a finite crystal with linear lattice-constant variation
X-Ray diffraction in a finite crystal with linear lattice-constant variation
A.V. Kolpakov, V.I. Punegov
The dynamic theory of X-ray diffraction is considered for a crystal of finite thickness with linear variation in the lattice period for the Bragg case. There is shown to be an analogy between X-ray diffraction in such a crystal and light diffraction at a slit in the Fresnel case.
Show AbstractPreferred nuclear orientation arising in beta decay in a steady magnetic field
Preferred nuclear orientation arising in beta decay in a steady magnetic field
V.N. Rodionov, I.M. Ternov, O.F. Dorofeev
A preferred spin orientation is shown to occur in nuclei arising from beta decay in a strong steady magnetic field. A study is made of the conditions under which the proton polarization in the reaction $n \to p+e+\bar{\nu}$ is close to 100%.
Show AbstractMixing of the $2S_{1/2}$ and $2P_{1/2}$ levels in hydrogen
Mixing of the $2S_{1/2}$ and $2P_{1/2}$ levels in hydrogen
V.V. Starshenko, R.N. Faustov
A calculation is performed on proton-recoil effects in the mixing of the $2S_{1/2}$ and $2P_{1/2}$ levels in hydrogen due to the weak interaction.
Show AbstractThe charge on nickel oxide in electron-stimulated neutral molecule desorption
The charge on nickel oxide in electron-stimulated neutral molecule desorption
G.G. Fedorov, V.F. Vasil'ev
A study has been made of the charging mechanism for nickel oxide in electron-stimulated neutral-molecule desorption. It has been found that the charging is not related either to the electron-stimulated desorption of positive ions or to the trapping of the bombarding electrons at traps in the surface. A charging mechanism is proposed.
Show AbstractThe propagation of sound in a vibrationally nonequilibrium gas
The propagation of sound in a vibrationally nonequilibrium gas
A.I. Osipov, A.V. Uvarov
A dispersion equation is derived for the propagation of sound in a nonequilibrium vibrationally excited gas with allowance for the pumping and heat loss; the condition for sound amplification is derived. Numerical estimates are made that indicate that the effect should be observable.
Show AbstractOne-parameter equations in describing average-velocity profiles for turbulent flows of weak polymer solutions
One-parameter equations in describing average-velocity profiles for turbulent flows of weak polymer solutions
V.P. Petrov, V.I. Sugrei, Yu.L. Shchev'ev
Introducing a weak polymer solution into a flowing liquid reduces the resistance coefficient, thickens the viscous sublayer, and increases the velocity gradients. To describe the average-velocity profile in a turbulent flow, one can use one-parameter equations in which the adjustable constants in the logarithmic distributions for the average velocities are expressed in terms of the thickness of the viscous sublayer in the transitional region and the turbulent core, that thickness being $2/\kappa$ where $\kappa$ is the Karman parameter.
Show AbstractThe relation between the even photomagnetic effect and the photo-Hall effect
The relation between the even photomagnetic effect and the photo-Hall effect
V.I. Nikolaev, G.N. Sever, T.V. Shilova
The paper discusses the scope for using the even photomagnetic effect PME in examining the properties of semiconductor materials in cases where one usually employs the photo-Hall PH effect. One of the components of the even PME involves the same mechanism as the PH, and therefore similar information is provided by the even PME and PH regarding the properties of the semiconductor material. This is confirmed by measurements on the even PME and PH, and also on the odd PME in the same geometry for p-type Ge and Si.
Show AbstractEffects of atomic collisions on radiation line width
Effects of atomic collisions on radiation line width
V.A. Klivadenko
The quantum kinetic equation for the density-matrix elements has been used in calculating the line width given by a gas laser on the basis of atomic collisions in the working medium. A strong-collision model has been used in deriving analytic expressions for the intensities of the amplitude and phase fluctuations in the polarization. The results for strong fields are in qualitative agreement with experiment.
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