Annotation
Conditions under which one should expect the inception of a smooth random field in a disordered (amorphous or alloyed crystalline) semiconductor are examined. It is shown that such a field may arise in not too well prepared specimens.
© 2016 Publisher M.V.Lomonosov Moscow State University
Authors
V.L. Bоnсh - Bruevich
Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
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