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On the origin of a smooth random field in disordered semiconductors

V.L. Bоnсh - Bruevich

Moscow University Physics Bulletin 1981. 36. N 2. P. 27

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Annotation

Conditions under which one should expect the inception of a smooth random field in a disordered (amorphous or alloyed crystalline) semiconductor are examined. It is shown that such a field may arise in not too well prepared specimens.

Rissian citation:
В.Л. Бонч - Бруевич.
О происхождении гладкого случайного поля в неупорядоченных полупроводниках.
Вестн. Моск. ун-та. Сер. 3. Физ. Астрон. 1981. № 2. С. 24.
Authors
V.L. Bоnсh - Bruevich
Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Issue 2, 1981

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