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Low-energy density of states tail in heavily doped semiconductor

N.V. Burbaeva

Moscow University Physics Bulletin 1981. 36. N 2. P. 64

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Annotation

The problem of the density of states of deep fluctuation levels in a semiconduct or doped by fine donors and acceptors is considered with allowance for Debye screening. The dependence is found of the leading term of the logarithm of the density of states and of the electron localization radius 1/α on ionization energy E, for different values of parameter δ = N$_d$r$_{0}^{4}$/a$_{B}$, where N$_d$ is the donor population, r$_{0}$ is the screening radius, and a$_{B}$ is the Bohr radius of an isolated doping-material atom. It is clarified that the form of the distribution of doping-material electrons in an optimal fluctuation, the potential energy of an electron in an optimal well, and consequently, also the density of states of deep fluctuation levels are highly dependent on the screening radius r$_{0}$.

Rissian citation:
Н.В. Бурбаева.
Глубокий хвост плотности состояний в сильно легированном полупроводнике.
Вестн. Моск. ун-та. Сер. 3. Физ. Астрон. 1981. № 2. С. 54.
Authors
N.V. Burbaeva
Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Issue 2, 1981

Moscow University Physics Bulletin

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