We study the transverse magnetoresistance, the Hall effect, and magnetization of monocrystalline gadolinium with $m=\rho_{300K}/\rho_{4.2K}=41$ at temperature 4.2 K and fields $H_{e_{max}}$ = 63 kOe. In the true fields $H_i = H_e - 4\pi IN \gg H_{is}$, where $I$ is the magnetization, $N$ is the demagnetiization factor of the samples, and $H_{is}$ is the true saturation field, we observe an increase of magnetoresistance and a linear dependence of the Hall emf on the field, which are associated with the fulfillment of the strong-field criterion $h \omega_H \gg kT$, where $\omega_H$ is the cyclotron frequency. Using the measured Hall emf in the fields $H_i \gg H_{is}$, we estimate the normal Hall coefficients $R_0$ and the difference of the carrier concentration $\Delta N$ per atom of gadolinium.
Department of Magnetism, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119991, Russia