Generation of a second harmonic and a total frequency with reflection from a silicon surface implanted with phosphorus ions: diagnosis of crystalline structure randomization

Observation of orientational relations of the intensity of the second harmonic and the total frequency generated with reflection from the (111) cut of a silicon surface implanted with phosphorus ions is reported. The experiment showed that a rise in the implantation dose results in a drop in the relative value of the anisotropic contribution to the signal, which corresponds to a gradual rise in the degree of randomization of the crystalline structure.