Faculty of Physics
M.V.Lomonosov Moscow State University
Regular Article

Generation of a second harmonic and a total frequency with reflection from a silicon surface implanted with phosphorus ions: diagnosis of crystalline structure randomization

M.F. Galyautdinov, S.V. Govorkov, N.I. Koroteev, I.B. Khaibullin, I.L. Shumai

Moscow University Physics Bulletin 1986. 41. N 4. P. 123

  • Article

Observation of orientational relations of the intensity of the second harmonic and the total frequency generated with reflection from the (111) cut of a silicon surface implanted with phosphorus ions is reported. The experiment showed that a rise in the implantation dose results in a drop in the relative value of the anisotropic contribution to the signal, which corresponds to a gradual rise in the degree of randomization of the crystalline structure.

Rissian citation:
М.Ф. Галяутдинов, С.В. Говорков, Н.И. Коротеев, И.Б. Хайбуллин, И.Л. Шумай.
Генерация второй гармоники и суммарной частоты при отражении от поверхности кремния, имплантированной ионами фосфора: диагностика разупорядочения кристаллической структуры.
Вестн. Моск. ун-та. Сер. 3. Физ. Астрон. 1986. № 4. С. 99.
M.F. Galyautdinov, S.V. Govorkov, N.I. Koroteev, I.B. Khaibullin, I.L. Shumai
Department of General Physics and Wave Processes, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Issue 4, 1986

Moscow University Physics Bulletin

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