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Generation of a second harmonic and a total frequency with reflection from a silicon surface implanted with phosphorus ions: diagnosis of crystalline structure randomization

M.F. Galyautdinov, S.V. Govorkov, N.I. Koroteev, I.B. Khaibullin, I.L. Shumai

Moscow University Physics Bulletin 1986. 41. N 4. P. 123

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Annotation

Observation of orientational relations of the intensity of the second harmonic and the total frequency generated with reflection from the (111) cut of a silicon surface implanted with phosphorus ions is reported. The experiment showed that a rise in the implantation dose results in a drop in the relative value of the anisotropic contribution to the signal, which corresponds to a gradual rise in the degree of randomization of the crystalline structure.

Rissian citation:
М.Ф. Галяутдинов, С.В. Говорков, Н.И. Коротеев, И.Б. Хайбуллин, И.Л. Шумай.
Генерация второй гармоники и суммарной частоты при отражении от поверхности кремния, имплантированной ионами фосфора: диагностика разупорядочения кристаллической структуры.
Вестн. Моск. ун-та. Сер. 3. Физ. Астрон. 1986. № 4. С. 99.
Authors
M.F. Galyautdinov, S.V. Govorkov, N.I. Koroteev, I.B. Khaibullin, I.L. Shumai
Department of General Physics and Wave Processes, Faculty of Physics, Moscow State University, Leninskie Gory, Moscow, 119992, Russia
Issue 4, 1986

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